BLL1214-250 NXP Semiconductors, BLL1214-250 Datasheet

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap

BLL1214-250

Manufacturer Part Number
BLL1214-250
Description
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap
Manufacturer
NXP Semiconductors
Datasheet

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Product specification
Supersedes data of 2002 Aug 06
book, halfpage
DATA SHEET
BLL1214-250
L-band radar LDMOS transistor
M3D379
DISCRETE SEMICONDUCTORS
2003 Aug 29

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BLL1214-250 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 ...

Page 2

... (V) (mA) (W) (dB) 36 150 250 >12 CONDITIONS ms CAUTION 2 Product specification BLL1214-250 DESCRIPTION drain gate source, connected to flange Top view MBK394 Fig.1 Simplified outline. pulse droop (%) (ns) (dB) >42 <0.6 <100 MIN. MAX ...

Page 3

... OPERATION (MHz) Pulsed class-AB; 1200 to 1400 ms; = 10% p Ruggedness in class-AB operation The BLL1214-250 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions frequency from 1200 MHz to 1400 MHz at rated load power. DS Typical impedance FREQUENCY (GHZ) 1.20 1.25 1 ...

Page 4

... GHz. ( 1.2 GHz Fig.3 MLD860 handbook, halfpage 200 300 P L (W) ( 1.4 GHz. ( 1.2 GHz Fig.5 4 Product specification BLL1214-250 300 P L (W) 200 (3) 100 ( 1.3 GHz. ( 1.4 GHz. = 100 s; = 10%. Load power as function of input power; typical values. ...

Page 5

... P L (W) ( 1.4 GHz. ( 1.2 GHz. t Fig.7 MLD864 60 handbook, halfpage D (%) 1.35 1.45 f (GHz) t Fig.9 5 BLL1214-250 60 D (%) (1) ( 100 200 ( 1.3 GHz. ( 1.4 GHz. = 100 s; = 10%. p Efficiency as function of load power; typical values (dB ...

Page 6

... Hatched area indicates standard tuning. The components are situated on one side of the copper-clad Rodgers Duroid 6010 printed-circuit board ( The other side is unetched and serves as a ground plane. 2003 Aug & & Fig.10 Component layout. 6 Product specification BLL1214-250 MLD866 = 10.2, thickness = 0.64 mm). r ...

Page 7

... Philips Semiconductors L-band radar LDMOS transistor List of components (see Fig.10) COMPONENT C1, C3 capacitor C2, C4 capacitor C5, C6 capacitor C7 capacitor C8 electrolytic capacitor 2003 Aug 29 DESCRIPTION 7 Product specification BLL1214-250 VALUE CATALOGUE NO ATC100A 47 pF ATC100A 20 nF ATC200B 36 pF ATC200B 100 F; 100 V ...

Page 8

... 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9.25 0.89 18.92 4.32 0.786 0.374 0.375 0.045 0.785 0.210 0.774 0.366 0.364 0.035 0.745 0.170 REFERENCES JEDEC JEITA 8 BLL1214-250 3.38 1.70 34.16 9.91 27.94 3.12 1.45 33.91 9.65 0.133 0.067 1.345 0.390 1.100 0.123 0.057 0.380 1 ...

Page 9

... Product specification BLL1214-250 DEFINITION These products are not Philips Semiconductors ...

Page 10

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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