BF904AWR NXP Semiconductors, BF904AWR Datasheet - Page 10

• Manufacturer Part Number: BF904AWR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 1 Scattering parameters: V
Table 2 Noise data: V
(MHz)
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
N-channel dual gate MOS-FETs
100
200
300
400
500
600
700
800
900
f
40
(MHz)
MAGNITUDE
800
f
(ratio)
0.989
0.987
0.976
0.972
0.947
0.925
0.905
0.883
0.861
0.841
0.822
0.787
0.752
0.723
0.685
0.665
0.659
0.670
0.700
0.729
0.726
S
11
DS
= 5 V; V
ANGLE
106.3
124.2
129.3
138.7
150.1
(deg)
114.0
119.8
15.7
23.3
30.6
37.6
44.4
50.9
57.0
63.0
68.4
78.9
88.1
97.3
3.2
7.9
G2-S
DS
(dB)
F
= 5 V; V
MAGNITUDE
2.0
min
= 4 V; I
(ratio)
2.52
2.52
2.47
2.43
2.36
2.26
2.19
2.10
2.01
1.93
1.85
1.71
1.59
1.47
1.36
1.31
1.30
1.26
1.10
0.82
0.52
G2-S
D
Rev. 04 - 13 November 2007
S
= 10 mA; T
21
= 4 V; I
ANGLE
175.9
169.4
159.2
150.5
139.6
130.3
121.1
103.6
(deg)
120.8
162.8
112.3
95.5
87.8
72.3
57.3
40.1
25.0
14.0
42.2
78.2
D
7.7
amb
= 10 mA; T
(ratio)
0.686
= 25 C
MAGNITUDE
BF904A; BF904AR; BF904AWR
(ratio)
0.001
0.001
0.003
0.004
0.005
0.005
0.005
0.006
0.006
0.006
0.006
0.007
0.019
0.021
0.026
0.035
0.050
0.011
0.076
0.106
0.128
amb
opt
= 25 C
S
12
(deg)
49.6
ANGLE
(deg)
102.6
127.1
143.7
150.0
149.4
151.5
158.2
163.4
162.2
150.5
137.4
87.9
86.1
81.4
80.5
76.9
75.6
75.5
78.0
85.3
90.7
MAGNITUDE
(ratio)
0.989
0.988
0.984
0.985
0.975
0.968
0.961
0.954
0.946
0.934
0.931
0.923
0.926
0.935
0.931
0.930
0.944
0.941
0.849
0.642
0.480
Product specification
50.4
S
( )
R
22
n
10 of 15
ANGLE
103.5
130.9
130.6
(deg)
119.7
12.7
16.9
20.8
24.7
28.4
32.0
35.6
39.3
46.7
54.2
62.2
69.3
77.7
89.1
1.7
4.3
8.6