BF904AWR NXP Semiconductors, BF904AWR Datasheet - Page 4

• Manufacturer Part Number: BF904AWR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Soldering point of the source lead.
STATIC CHARACTERISTICS
T
Note
1. R
DYNAMIC CHARACTERISTICS
Common source; T
R
V
V
V
V
V
V
I
I
I
C
C
C
C
F
j
DSX
G1-SS
G2-SS
SYMBOL
SYMBOL
SYMBOL
y
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S(th)
G2-S(th)
th j-s
= 25 C unless otherwise specified.
ig1-s
ig2-s
os
rs
N-channel dual gate MOS-FETs
fs
G1
connects gate 1 to V
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
drain-source capacitance
reverse transfer capacitance f = 1 MHz
noise figure
thermal resistance from junction to soldering point
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
amb
PARAMETER
= 25 C; V
PARAMETER
GG
= 5 V; see Fig.21.
DS
PARAMETER
= 5 V; V
G2-S
pulsed; T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
f = 800 MHz; G
Rev. 04 - 13 November 2007
= 4 V; I
V
V
V
V
V
V
V
R
V
V
G2-S
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G2-S
G1-S
j
G1
= 25 C
D
CONDITIONS
= 120 k ; note 1
= 10 mA; unless otherwise specified.
= V
= V
= V
= V
= 4 V; V
= V
= 4 V; V
= V
= V
S
S
= 2 mS; B
= G
DS
DS
DS
DS
DS
DS
DS
CONDITIONS
= 0; I
= 0; I
= 0; I
= 0; I
= 5 V; I
= 0; V
= 0; V
Sopt
DS
DS
BF904A; BF904AR; BF904AWR
note 1
; B
= 5 V; I
= 5 V;
G1-S
G2-S
S-G1
S-G2
G1-S
G2-S
S
S
D
CONDITIONS
= B
= B
= 20 A
= 10 mA
= 10 mA
= 10 mA
= 10 mA
= 5 V
= 5 V
D
Sopt
Sopt
= 20 A
22
1
1
MIN.
6
6
0.5
0.5
0.3
0.3
8
25
2.2
1.5
1.4
25
1
2
MIN.
TYP.
VALUE
200
Product specification
15
15
1.5
1.5
1
1.2
13
50
50
30
2.6
2
1.7
35
1.5
2.8
MAX.
MAX.
4 of 15
UNIT
K/W
V
V
V
V
V
V
mA
nA
nA
mS
pF
pF
pF
fF
dB
dB
UNIT
UNIT