BF908WR NXP Semiconductors, BF908WR Datasheet - Page 3

• Manufacturer Part Number: BF908WR
• Description: Depletion type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
1995 Apr 25
handbook, halfpage
V
I
I
I
P
T
T
D
G1
G2
SYMBOL
stg
j
DS
tot
N-channel dual-gate MOS-FET
(mW)
P tot
400
300
200
100
0
0
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
Fig.2 Power derating curve.
50
PARAMETER
100
150
T
amb
MLD154
( C)
o
200
up to T
note 1
amb
CONDITIONS
3
= 45 C; see Fig.2;





65

MIN.
Preliminary specification
12
40
10
10
300
+150
+150
MAX.
BF908WR
V
mA
mA
mA
mW
C
C
UNIT