STTH4R02-Y STMicroelectronics, STTH4R02-Y Datasheet - Page 2

• Manufacturer Part Number: STTH4R02-Y
• Description: Automotive Ultrafast recovery diode
• Manufacturer: STMicroelectronics

Characteristics
1
2/9
Characteristics
Table 2.
Table 3.
Table 4.
1. Pulse test: t
2. Pulse test: t
To evaluate the conduction losses use the following equation:
P = 0.67 x I
Table 5.
Symbol
Symbol
Symbol
Symbol
I
R
V
F(RMS)
I
V
I
I
F(AV)
T
V
I
FSM
th(j-c)
R
RRM
RM
F
t
T
t
stg
FP
rr
fr
(1)
(2)
j
Repetitive peak reverse voltage
Forward rms current
Average forward current, δ = 0.5
Surge non repetitive forward current
Storage temperature range
Operating junction temperature range
Junction to case
Reverse leakage
current
Forward voltage drop
Reverse recovery
time
Reverse recovery
current
Forward recovery
time
Forward recovery
voltage
F(AV)
p
p
Absolute ratings (limiting values at T
Thermal parameters
Static electrical characteristics
Dynamic characteristics
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
Parameter
Parameter
+ 0.04 I
F
2
(RMS)
I
V
I
V
I
V
I
V
I
T
F
F
F
F
F
Doc ID 17391 Rev 1
j
R
R
R
FR
= 1 A, dI
= 1 A, dI
= 4 A, dI
= 4 A, dI
= 4 A, dI
= 25 °C
T
T
T
T
T
= 30 V, T
= 30 V, T
= 160 V, T
j
j
j
j
j
= 1.1 x V
= 25 °C
= 125 °C
= 25 °C
= 25 °C
= 150 °C
Parameter
Parameter
Test conditions
Test conditions
F
F
F
F
F
/dt = -50 A/µs,
/dt = -100 A/µs,
/dt = -200 A/µs,
/dt = 50 A/µs
/dt = 50 A/µs,
j
j
= 25 °C
= 25 °C
Fmax
j
= 125 °C
V
I
I
F
F
, T
R
= 12 A
= 4 A
= V
j
= 25 °C
t
p
RRM
= 10 ms sinusoidal
j
= 25 °C, unless otherwise specified)
Min.
T
Min.
c
= 95 °C
Typ.
Typ.
1.15
0.95
0.76
4.4
1.6
24
16
80
2
-40 to +175
-65 to +175
Value
Value
200
70
70
20
4
Max.
Max.
1.25
1.05
0.83
5.5
30
20
20
STTH4R02-Y
3
°C/W
Unit
Unit
Unit
Unit
µA
°C
°C
ns
ns
V
A
A
A
V
A
V