STPS1H100-Y STMicroelectronics, STPS1H100-Y Datasheet - Page 2

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STPS1H100-Y

Manufacturer Part Number
STPS1H100-Y
Description
Automotive power Schottky rectifier
Manufacturer
STMicroelectronics
Datasheet

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Characteristics
1
2/9
Characteristics
Table 2.
1.
Table 3.
Table 4.
1. Pulse test: t
2. Pulse test: t
To evaluate the conduction losses use the following equation:
P = 0.54 x I
Symbol
Symbol
Symbol
I
V
F(RMS)
R
P
dV/dt
I
I
V
I
I
F(AV)
I
T
RRM
RSM
FSM
R
RRM
ARM
th(j-l)
F
T
dPtot
stg
dTj
(1)
(2)
j
<
Repetitive peak reverse voltage
Forward rms voltage
Average forward current
Surge non repetitive forward current t
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Operating junction temperature
Critical rate of rise of reverse voltage
Junction to lead
Reverse leakage current
Forward voltage drop
Rth(j-a)
F(AV)
1
p
p
Absolute ratings (limiting values)
Thermal resistance
Static electrical characteristics
= 5 ms, δ < 2%
= 380 µs, δ < 2%
Parameter
condition to avoid thermal runaway for a diode on its own heatsink
+ 0.08 I
F
2
(RMS)
Doc ID 17935 Rev 1
T
T
T
T
T
T
Parameter
Parameter
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Test conditions
(1)
T
t
t
t
p
p
p
p
V
I
I
L
F
F
=10 ms sinusoidal
= 2 µs F = 1 kHz square
= 100 µs square
= 1 µs T
R
= 160 °C δ = 0.5
= 1 A
= 2 A
= V
RRM
j
= 25 °C
SMA
SMB
Min.
Typ.
0.58
0.65
0.2
- 65 to + 175
- 40 to + 175
10000
Value
Value
1500
100
10
50
30
25
1
1
1
Max.
0.77
0.62
0.86
STPS1H100-Y
0.5
0.7
4
°C/W
V/µs
Unit
Unit
Unit
mA
µA
°C
°C
W
V
A
A
A
A
A
V

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