STPS745 STMicroelectronics, STPS745 Datasheet - Page 4

• Manufacturer Part Number: STPS745
• Description: Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS745

• Insulated Package: TO-220FPAC

Characteristics
4/9
Figure 7.
Figure 9.
Figure 11. Forward voltage drop versus
1.0
0.8
0.6
0.4
0.2
0.0
5E+4
1E+4
1E+3
1E+2
1E+0
100.0
1E+1
1E-1
10.0
1E-4
1.0
0.1
0.0
Z
0
th(j-c)
I (µA)
I
δ = 0.5
δ = 0.2
Single pulse
δ = 0.1
R
FM
(A)
/R
0.2
5
th(j-c)
Relative variation of thermal
transient impedance junction to
case versus pulse duration
(TO-220AC and D
Reverse leakage current versus
reverse voltage applied (typical
values)
forward current (maximum values)
1E-3
10
(typical values)
0.4
T =125°C
j
15
0.6
20
1E-2
V (V)
t (s)
V
p
T =150°C
T =125°C
T =100°C
T =75°C
T =50°C
T =25°C
R
0.8
FM
j
j
j
j
j
j
T =125°C
j
(V)
25
2
1.0
PAK)
30
T =25°C
j
1E-1
1.2
δ
35
=tp/T
1.4
T
40
tp
1E+0
1.6
45
Figure 8.
Figure 10. Junction capacitance versus
Figure 12. Thermal resistance junction to
1.0
0.8
0.6
0.4
0.2
0.0
1000
80
70
60
50
40
30
20
10
500
200
100
0
1E-3
0
R
Z
1
th(j-a)
C(pF)
th(j-c)
δ = 0.5
δ = 0.2
Single pulse
δ = 0.1
2
(°C/W)
/R
th(j-c)
2
4
Relative variation of thermal
transient impedance junction to
case versus pulse duration
(TO-220FPAC)
reverse voltage applied (typical
values)
ambient versus copper surface
under tab (Epoxy printed circuit
board, copper thickness: 35 µm)
1E-2
6
8
S(Cu)(cm²)
5
1E-1
V (V)
t (s)
p
10
R
10
12
14
1E+0
20
δ
=tp/T
16
V
OSC
STPS745
F=1MHz
T =25°C
=30mV
j
T
18
RMS
tp
1E+1
50
20