STPS15L30CDJF STMicroelectronics, STPS15L30CDJF Datasheet - Page 2

• Manufacturer Part Number: STPS15L30CDJF
• Description: Low drop power Schottky rectifier
• Manufacturer: STMicroelectronics

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Characteristics
Table 2.
1.
Table 3.
When diodes 1 and 2 are used simultaneously:
Δ T
Table 4.
1. Pulse test: t
To evaluate the conduction losses use the following equation:
P = 0.27 x I
Symbol
Symbol
Symbol
I
R
V
F(RMS)
I
P
R
I
V
I
I
F(AV)
T
RRM
FSM
th(j-c)
ARM
j
R
RRM
th(c)
(diode 1) = P(diode1) x R
T
F
stg
dPtot
(1)
(1)
dTj
j
<
Repetitive peak reverse voltage
Forward rms current
Average forward current δ = 0.5
Surge non repetitive forward current
Peak repetitive reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Junction to case
Coupling
Reverse leakage
current
Forward voltage drop
Rth(j-a)
F(AV)
1
p
Absolute ratings (limiting values, per diode)
Thermal resistance
Static electrical characteristics (per diode)
= 380 µs, δ < 2%
Parameter
+ 0.016 I
condition to avoid thermal runaway for a diode on its own heatsink
F
2
(RMS)
th(j-c)
Doc ID 15664 Rev 4
T
T
T
T
T
T
j
j
j
j
j
j
(per diode) + P(diode 2) x R
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Parameter
Parameter
Test conditions
V
I
I
I
I
T
t
t
t
F
F
F
F
p
p
p
R
c
= 7.5 A
= 7.5 A
= 15 A
= 15 A
= 10 ms sinusoidal
= 2 µs square F= 1 kHz
= 1 µs T
= 140 °C
(1)
= V
RRM
j
= 25 °C
Per diode
Per device
Per diode
Total
Min.
-
-
-
-
-
-
th(c)
Typ.
0.34
0.44
70
-
-
-
-65 to + 175
Value
Value
2800
150
7.5
2.5
1.6
0.7
30
10
15
75
1
Max.
0.48
0.39
0.57
0.51
140
1
°C/W
Unit
Unit
Unit
mA
mA
°C
°C
W
V
A
A
A
A
V