STPS40120C STMicroelectronics, STPS40120C Datasheet - Page 2

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STPS40120C

Manufacturer Part Number
STPS40120C
Description
Power Schottky Rectifier
Manufacturer
STMicroelectronics
Datasheet

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Characteristics
1
2/9
Characteristics
Table 2.
1.
Table 3.
When the diodes 1 and 2 are used simultaneously:
ΔT
Table 4.
1. Pulse test: t
2. Pulse test: t
To evaluate the maximum conduction losses use the following equation:
P = 0.58 x I
Symbol
Symbol
V
I
j
I
dPtot
---------------
(diode 1) = P(diode 1) x
V
F(RMS)
R
P
I
F
I
dTj
F(AV)
Symbol
T
FSM
(1)
RRM
ARM
(2)
R
T
stg
R
j
th(j-c)
th(c)
<
------------------------- -
Rth j a
Reverse leakage current
Forward voltage drop
(
1
F(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward
current
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
p
p
Absolute ratings (limiting values, per diode)
Thermal parameters
Static electrical characteristics (per diode)
= 5 ms,
= 380 µs,
)
Test conditions
condition to avoid runaway for a diode on its own heatsink
Junction to case
Coupling
+ 0.0075 I
δ
< 2%
δ
< 2%
F
R
2
th(j-c)
(RMS)
δ = 0.5
T
Doc ID 11214 Rev 3
c
Parameter
= 145 °C
(per diode) + P(diode 2) x
Parameter
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Per diode
Total
Total
V
I
I
I
F
F
F
t
Per diode
Per device
t
p
p
R
(1)
= 7.5 A
= 20 A
= 40 A
= 10 ms sinusoidal
= 1 µs, T
= V
RRM
j
= 25 °C
R
th(c)
Min.
Value
0.85
1.6
0.1
Typ.
0.57
0.69
0.83
-65 to + 175
4
10500
Value
120
200
175
30
20
40
Max.
0.73
0.61
0.73
0.88
STPS40120C
0.9
25
12
1
°C/W
°C/W
Unit
Unit
Unit
W
mA
°C
°C
V
A
A
A
μA
V

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