STPS660CB STMicroelectronics, STPS660CB Datasheet
STPS660CB
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STPS660CB Summary of contents
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... Storage temperature range stg Tj Maximum junction temperature dV/dt Critical rate of rise of reverse voltage July 1998 - POWER SCHOTTKY RECTIFIER 0.59 V Parameter Tcase = 120° Sinusoidal 1kHz STPS660CB(-TR DPAK Value Unit ...
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... STPS660CB(-TR) THERMAL RESISTANCES Symbol R Junction to case th(j-c) STATIC ELECTRICAL CHARACTERISTICS Symbol Tests Conditions I * Reverse leakage current Forward voltage drop F Pulse test : * ms, < 380 s, < evaluate the maximum conduction losses use the following equation : 0. 0.035 I F(AV) F (RMS) ...
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... Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. REF 6.7 6.7 3 1.6 STMicroelectronics GROUP OF COMPANIES STPS660CB(-TR) DIMENSIONS Millimeters Inches Min. Typ. Max Min. Typ. Max. 2.20 2.40 0.086 0.90 1.10 0.035 0.03 0.23 0.001 0.64 0.90 0.025 5.20 5.40 0.204 0.45 0.60 0.017 0.48 ...