STPS1L30 STMicroelectronics, STPS1L30 Datasheet - Page 2

• Manufacturer Part Number: STPS1L30
• Description: Low Drop Power Schottky Rectifier
• Manufacturer: STMicroelectronics

STPS1L30
Table 4: Thermal Resistance
Table 5: Static Electrical Characteristics
Pulse test:
To evaluate the conduction losses use the following equation: P = 0.225 x I
Figure 1: Average forward power dissipation
versus average forward current
Figure
derating versus pulse duration
2/7
0.001
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Symbol
Symbol
0.01
0.1
R
1
0.01
V
I
th(j-l)
0.0
R
P
P
F
P
ARM
F(AV)
*
ARM p
*
(1µs)
(W)
(t )
3:
Junction to lead
Reverse leakage current
Forward voltage drop
0.2
0.1
* tp = 380 µs,
Normalized
δ = 0.05
Parameter
0.4
1
δ = 0.1
I
δ
F(AV)
t (µs)
p
< 2%
0.6
(A)
δ = 0.2
avalanche
10
0.8
δ = 0.5
T
T
T
T
T
T
δ
100
Parameter
j
j
j
j
j
j
=tp/T
δ = 1
= 25°C
= 100°C
= 25°C
= 125°C
= 25°C
= 125°C
1.0
Tests conditions
T
power
tp
1000
1.2
V
I
I
F
F
R
= 1A
= 2A
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
Figure
derating versus junction temperature
= V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
0.8
0.6
0.4
0.2
F(AV)
1
0
25
I
0
RRM
F(AV)
P
P
ARM
δ
=tp/T
ARM p
+ 0.075 I
SMA
SMB
(A)
(25°C)
4:
(t )
T
25
50
Min.
F
tp
Normalized
2
(RMS)
50
0.325 0.375
75
0.26
Typ
T
6
amb
T (°C)
j
75
(°C)
Value
R
th(j-a)
30
25
0.395
0.445
Max.
100
200
=120°C/W
avalanche
0.3
15
R
th(j-a)
100
=100°C/W
125
R
th(j-a)
125
°C/W
Unit
Unit
=R
mA
µA
th(j-I)
V
power
150
150