STPS40L45C STMicroelectronics, STPS40L45C Datasheet
STPS40L45C
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STPS40L45C Summary of contents
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... Tc = 130° Sinusoidal µs square F = 1kHz tp = 100 µs square tp = 1µ 25° PAK STPS40L45CG TO-247 STPS40L45CW Value Per diode Per device 40 230 2 3 8100 - 150 150 10000 A2 K Unit ...
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... STPS40L45CT/CW THERMAL RESISTANCES Symbol R Junction to case th (j-c) R th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage cur- R rent V * Forward voltage F drop Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : ...
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... Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 = 0.5 0.6 Tc=25°C 0.4 = 0.2 Tc=75°C = 0.1 0.2 Tc=125°C Single pulse 0.0 1E-4 1E-1 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 10.0 1.0 0 STPS40L45CT/ (25°C) T (° 100 tp(s) 1E-3 1E-2 1E-1 VR(V) 10 125 150 T tp =tp/T 1E+0 F=1MHz Tj=25°C 100 3/6 ...
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... COOLING METHOD : C RECOMMENDED TORQUE VALUE : 0.55M.N MAXIMUM TORQUE VALUE : 0.70 M.N 4/6 Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm) (STPS40L45CG only). Rth(j-a) (°C/ 1.0 1.2 1.4 1.6 REF. ...
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... COOLING METHOD : BY CONDUCTION (METHOD C) FOOT PRINT (in millimeters PAK 16.90 10.30 8.90 A REF 5.08 1.30 3.70 STPS40L45CG/CT/CW DIMENSIONS Millimeters Inches Min. Max. Min. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8.95 9.35 ...
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... Marking STPS40L45CG STPS40L45CG STPS40L45CT STPS40L45CT STPS40L45CW STPS40L45CW EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...