STPS8H100 STMicroelectronics, STPS8H100 Datasheet - Page 2

• Manufacturer Part Number: STPS8H100
• Description: High Voltage Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Characteristics
1
Table 2.
Table 3.
1. t
2. t
2/9
Figure 1.
Symbol
Symbol
R
V
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
R
p
p
th(j-c)
F
= 5 ms, δ < 2%
= 380 µs, δ < 2%
(1)
0
(2)
P
F(av)
1
(W)
Junction to case
Reverse leakage current
Forward voltage drop
Characteristics
Thermal resistance
Static electrical characteristics (per diode)
To evaluate the conduction losses use the following equation:
P = 0.48 x I
Average forward power
dissipation versus average
forward current
2
δ = 0.05
3
Parameter
δ = 0.1
4
I
F(av)
F(AV)
5
δ = 0.2
(A)
+ 0.0125 I
6
TO-220AC, D
TO-220FPAC
δ = 0.5
7
T
T
T
T
T
T
T
T
δ
j
j
j
j
j
j
j
j
Parameter
F
=t p /T
=t p /T
8
= 25° C
= 125° C
= 25° C
= 125° C
= 25° C
= 125° C
= 25° C
= 125° C
2
(RMS)
δ = 1
T
Tests conditions
9
2
t p t p
PAK
10
V
I
I
I
F
F
F
Figure 2.
R
= 8 A
= 10 A
= 16 A
0.001
= V
0.01
0.1
1
0.01
RRM
P
P
ARM p
ARM
(t )
(1µs)
Normalized avalanche power
derating versus pulse duration
0.1
Min.
1
0.56
0.59
0.65
Typ
t (µs)
p
2
Value
1.6
10
4
Max.
0.71
0.58
0.77
0.64
0.81
0.68
4.5
6.0
100
STPS8H100
° C/W
Unit
Unit
mA
µA
V
1000