STPS40M80C STMicroelectronics, STPS40M80C Datasheet - Page 4

• Manufacturer Part Number: STPS40M80C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

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Figure 6.
Figure 8.
Figure 10. Forward voltage drop versus
260
240
220
200
180
160
140
120
100
40
35
30
25
20
15
10
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
80
60
40
20
5
0
1.E-03
0
0.0
I (A)
FM
I (A)
M
0
I
I (µA)
M
R
0.1
δ = 0.5
10
0.2
t
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
forward current (per diode)
20
0.3
1.E-02
(Typical values)
T = 125 °C
(Maximum values)
j
0.4
30
T = 125 °C
T = 150 °C
T = 125 °C
T = 100 °C
T = 75 °C
T = 50 °C
T = 25 °C
j
j
j
j
j
j
j
0.5
40
0.6
1.E-01
(Maximum values)
50
T = 25 °C
0.7
j
60
0.8
T = 125 °C
c
T = 25 °C
T = 75 °C
c
c
Doc ID 018718 Rev 1
70
0.9
V (V)
V (V)
t(s)
FM
1.E+00
R
1.0
80
Figure 7.
Figure 9.
Figure 11. Reverse safe operating area
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10000
1000
1.E-04
100
Z
30.0
29.0
28.0
27.0
26.0
25.0
24.0
23.0
22.0
21.0
20.0
Single pulse
th(j-c)
1
C(pF)
100
I
/R
arm
th(j-c)
105
(A)
Relative thermal impedance
junction to case versus pulse
duration
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
(t
1.E-03
110
p
< 1 µs and T
115
I
arm
V
120
(V
arm
arm
1.E-02
125
(V)
) 150 °C, 1 µs
10
j
130
< 150 °C)
135
1.E-01
140
V
osc
F = 1 MHz
T = 25 °C
145
= 30 mV
j
150
t (s)
V (V)
1.E+00
p
R
RMS
100