STPS30H100C STMicroelectronics, STPS30H100C Datasheet - Page 3

• Manufacturer Part Number: STPS30H100C
• Description: High Voltage Power Schottky Rectifier
• Manufacturer: STMicroelectronics

STPS30H100C
Figure 1.
Figure 3.
Figure 5.
240
220
200
180
160
140
120
100
14
12
10
80
60
40
20
8
6
4
2
0
1E-3
0.001
0
0.01
0
P
0.1
I (A)
M
F(AV)
1
0.01
P
P
I
ARM
M
ARM
2
(W)
(1 µs)
(t p )
δ
=0.5
t
δ = 0.05
4
Average forward power dissipation
versus average forward current (per
diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
0.1
6
1E-2
δ = 0.1
8
1
I
δ = 0.2
F(AV)
t (µs)
p
10
t(s)
(A)
10
12
1E-1
δ = 0.5
14
100
δ
16
=tp/T
δ = 1
Doc ID 6347 Rev 7
T
18
T =150°C
T =25°C
T =75°C
a
a
a
1000
tp
1E+0
20
Figure 2.
Figure 4.
Figure 6.
18
16
14
10
1.0
0.8
0.6
0.4
0.2
0.0
12
8
6
4
2
0
1E-4
0
1.2
0.8
0.6
0.4
0.2
I
F(AV)
Z
1
0
th(j-c)
δ = 0.5
δ = 0.2
Single pulse
δ = 0.1
25
P
δ
=tp/T
ARM
P
(A)
ARM
/R
25
R
(25 °C)
th(j-a)
th(j-c)
T
(T j )
=15°C/W
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to case versus
pulse duration
1E-3
tp
50
50
75
75
T
t (s)
R
amb
T (°C)
1E-2
p
th(j-a)
j
=R
(°C)
th(j-c)
100
100
125
Characteristics
1E-1
125
δ
=tp/T
150
T
tp
150
1E+0
3/10
175