STPS3030C STMicroelectronics, STPS3030C Datasheet - Page 2

• Manufacturer Part Number: STPS3030C
• Description: Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Characteristics
1
2/9
Characteristics
Table 1.
1.
Table 2.
Table 3.
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.26 x I
Symbol
Symbol
R
Symbol
R
I
V
I
F(RMS)
V
I
P
dV/dt
th(j-c)
R
I
I
I
dPtot
---------------
th(c)
F(AV)
T
F
RRM
RSM
FSM
ARM
RRM
dTj
(1)
T
(1)
stg
j
<
------------------------- -
Rth j a
Junction to case TO-220AB - D
Reverse leakage current
Forward voltage drop
F(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current t
Peak repetitive reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage (rated V
(
1
Absolute ratings (limiting values, per diode)
Thermal resistance
Static electrical characteristics (per diode)
–
)
condition to avoid thermal runaway for a diode on its own heatsink
+ 0.0107 I
Parameter
F
2
(RMS)
Parameter
Parameter
T
T
T
T
T
T
j
j
j
j
j
j
2
= 25° C
= 125° C
= 25° C
= 125° C
= 25° C
= 125° C
PAK - I
Test conditions
2
t
PAK
T
δ = 0.5
t
t
p
p
p
p
c
= 2 µs square F= 1 kHz
= 10 ms sinusoidal
= 100 µs square
= 1 µs T
= 135° C Per diode
(1)
V
I
I
I
I
F
F
F
F
R
R
= 15 A
= 15 A
= 30 A
= 30 A
, T
= V
Per diode
Total
Coupling
j
j
= 25° C)
RRM
= 25° C
Per device
Min.
STPS3030CT/CG/CR
-65 to + 150
Typ.
0.23
0.44
0.36
0.53
0.49
125
10000
Value
4100
Value
250
150
30
30
15
30
1.2
0.8
0.4
1
3
Max.
0.49
0.40
0.58
0.53
180
1.0
V/µs
Unit
°C/W
Unit
°C
°C
Unit
W
V
A
A
A
A
A
mA
V