STPS30L40C STMicroelectronics, STPS30L40C Datasheet
STPS30L40C
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STPS30L40C Summary of contents
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... TO-220AB STPS30L40CT Parameter Tc = 135° Sinusoidal µs square F=1kHz tp = 100 µs square tp = 1µ 25° PAK STPS30L40CG TO-247 STPS30L40CW Value Per diode 30 Per device 220 1 3 6000 - 150 150 10000 Unit V A ...
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... STPS30L40CG/CT/CW THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage cur- R rent V * Forward voltage drop F Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : ...
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... Zth(j-c)/Rth(j-c) 1.0 0.8 = 0.5 0.6 Tc=25°C Tc=75°C 0.4 = 0.2 Tc=125°C = 0.1 0.2 0.0 1E-1 1E+0 1.0E-4 Fig. 8: Junction capacitance versus reverse voltage applied (typical values) (per diode). C(pF) 2000 1000 500 200 100 STPS30L40CG/CT/ (25°C) T (° 100 Single pulse =tp/T tp(s) 1.0E-3 1.0E-2 1.0E-1 VR( 125 150 T tp 1.0E+0 F=1MHz Tj=25° 3/6 ...
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... COOLING METHOD : C n RECOMMENDED TORQUE VALUE : 0.55 M.N n MAXIMUM TORQUE VALUE : 0.70 M.N n 4/6 Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm) (STPS30L40CG only). Rth(j-a) (°C/ 1.4 1.6 1.8 2.0 REF. ...
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... C) FOOT PRINT (in millimeters PAK 16.90 10.30 8.90 REF 5.08 1.30 3.70 STPS30L40CG/CT/CW DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8.95 9 ...
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... Marking STPS30L40CT STPS30L40CT STPS30L40CG STPS30L40CG STPS30L40CG-TR STPS30L40CG STPS30L40CW STPS30L40CW EPOXY MEETS UL94,V0 n Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...