STTH2003 STMicroelectronics, STTH2003 Datasheet - Page 4

• Manufacturer Part Number: STTH2003
• Description: Ultrafast Recovery Rectifier Diode
• Manufacturer: STMicroelectronics

Specifications of STTH2003

• Electrical Insulation: 2000 V DC
• Capacitance: 12 pF

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Figure 5.
Figure 7.
Figure 9.
16
14
12
10
0.60
0.50
0.40
0.30
0.20
0.10
0.00
10
8
6
4
2
0
8
6
4
2
0
0
V
0
I
RM
0
FP
S factor
I =I
T =125°C
V =200V
T =125°C
F
j
j
R
(A)
(V)
F(AV)
50
50
50
100
100
100
Peak reverse recovery current
versus dI
diode)
I =0.5 x I
(typical values, per diode)
versus dI
diode) (TO-220AB)
Softness factor (tb/ta) versus dI
Transient peak forward voltage
F
150
150
150
F(AV)
I =I
200
200
F
200
F(AV)
dI /dt(A/µs)
F
F
dI /dt(A/µs)
dI /dt(A/µs)
/dt (90% confidence, per
/dt (90% confidence, per
F
F
F
250
250
250
I =2 x I
F
300
300
F(AV)
300
350
350
350
400
400
400
Doc ID 5377 Rev 10
450
450
450
V =200V
T =125°C
R
j
F
/dt
500
500
500
Figure 6.
Figure 8.
Figure 10. Forward recovery time versus dI
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
500
400
300
200
100
80
60
40
20
0
0
25
0
0
t (ns)
t (ns)
fr
rr
50
50
100
100
Reverse recovery time versus dI
(90% confidence, per diode)
Relative variation of dynamic
parameters versus junction
temperature (reference: T
(90% confidence, per diode)
50
I =I
F
150
150
F(AV)
I =2 x I
F
200
200
dI /dt(A/µs)
dI /dt(A/µs)
S factor
I
RM
F(AV)
F
F
T (°C)
250
250
75
j
I =0.5 x I
F
300
300
F(AV)
350
350
100
V =1.1 x V max.
FR
400
400
T =125°C
j
I =I
F
j
= 125 °C)
F(AV)
F
450
450
V =200V
T =125°C
j
R
F
F
/dt
/dt
500
125
500