STTH6112TV STMicroelectronics, STTH6112TV Datasheet - Page 2

• Manufacturer Part Number: STTH6112TV
• Description: Ultrafast recovery - 1200 V diode
• Manufacturer: STMicroelectronics

Characteristics
1
Table 1.
Table 2.
Table 3.
1. Pulse test: t
2. Pulse test: t
2/8
Symbol
Symbol
I
F(RMS)
V
I
V
I
I
I
F(AV)
T
FRM
FSM
R
RRM
T
F
stg
(1)
(2)
j
Symbol
R
R
Reverse leakage current
Forward voltage drop
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Repetitive peak forward current
Surge non repetitive forward
current
Storage temperature range
Maximum operating junction temperature
th(j-c)
th(c)
p
p
Characteristics
Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Thermal parameters
When the diodes are used simultaneously:
∆T
Static electrical characteristics
To evaluate the conduction losses use the following equation:
P = 1.60 x I
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
j(diode1)
Parameter
= P
F(AV)
(diode1)
Junction to case
Coupling thermal resistance
+ 0.012 I
x
Parameter
R
th(j-c)
F
2
(RMS)
Parameter
t
t
(per diode) + P
p
p
= 5 µs, F = 5 kHz square
= 10 ms Sinusoidal
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
= 25° C
= 125° C
= 25° C
= 125° C
= 150° C
= 25° C
= 125° C
= 150° C
Test conditions
(diode2)
Per diode
V
I
I
F
F
R
Total
= 25 A
= 30 A
= V
T
c
x
RRM
= 70° C per diode
R
th(c)
Min.
Value
1.16
0.63
0.1
1.25
1.20
1.35
1.30
Typ
-65 to + 150
15
Value
1200
100
300
250
150
30
STTH6112TV
Max.
2.10
1.90
1.80
2.25
2.05
1.95
150
20
°C/W
Unit
Unit
Unit
°C
°C
µA
V
A
A
A
A
V