STTH1212 STMicroelectronics, STTH1212 Datasheet - Page 4

• Manufacturer Part Number: STTH1212
• Description: Ultrafast recovery - 1200 V diode
• Manufacturer: STMicroelectronics

Characteristics
4/9
Figure 3.
Figure 5.
Figure 7.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
600
550
500
450
400
350
300
250
200
150
100
1.E-03
0
Z
S factor
0
th(j-c)
t (ns)
Single pulse
rr
50
50
/R
th(j-c)
100
Relative variation of thermal
impedance junction to case
versus pulse duration
Reverse recovery time versus
dI
Softness factor versus dI
(typical values)
100
I =2 x I
F
F
/dt (typical values)
F(AV)
150
1.E-02
150
I =I
F
F(AV)
200
200
dI /dt(A/µs)
dI /dt(A/µs)
F
t (s)
F
p
250
250
I =0.5 x I
F
300
300
1.E-01
F(AV)
350
350
400
400
F
/dt
I
V =600V
T =125°C
450
F
V =600V
T =125°C
R
j
450
≤
j
R
2xI
1.E+00
F(AV)
500
500
Figure 4.
Figure 6.
Figure 8.
40
35
30
25
20
15
10
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
5
0
0
I
0
25
RM
Q (µC)
V =600V
T =125°C
rr
V =600V
T =125°C
j
R
j
R
(A)
50
50
Peak reverse recovery current
versus dI
100
Reverse recovery charges versus
dI
Relative variations of dynamic
parameters versus junction
temperature
100
I =0.5 x I
F
F
50
/dt (typical values)
150
S factor
150
I
RM
F(AV)
Q
RR
I =I
F
200
200
F(AV)
dI /dt(A/µs)
F
dI /dt(A/µs)
/dt (typical values)
F
t
F
rr
I =0.5 x I
F
T (°C)
I =2 x I
250
F
250
I =I
j
75
F
F(AV)
F(AV)
F(AV)
300
I =2 x I
300
F
F(AV)
350
350
100
400
400
Reference: T =125°C
STTH1212
V =600V
I =I
F
R
450
450
F(AV)
j
500
500
125