STTH1210 STMicroelectronics, STTH1210 Datasheet - Page 2

• Manufacturer Part Number: STTH1210
• Description: Ultrafast recovery - high voltage diode
• Manufacturer: STMicroelectronics

Characteristics
1
Table 1.
Table 2.
Table 3.
1. Pulse test: t
2. Pulse test: t
2/11
Symbol
Symbol
I
F(RMS)
Symbol
V
I
V
I
I
I
F(AV)
R
T
FRM
FSM
R
RRM
T
F
stg
th(j-c)
(1)
(2)
j
Reverse leakage current
Forward voltage drop
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
p
p
Characteristics
Absolute ratings (limiting values at 25° C, unless otherwise specified)
Thermal parameters
Static electrical characteristics
To evaluate the conduction losses use the following equation:
P = 1.3 x I
Junction to case
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
Parameter
F(AV)
+ 0.033 I
F
2
(RMS)
Parameter
Parameter
T
T
T
T
T
j
j
j
j
j
= 25° C
= 125° C
= 25° C
= 100° C
= 150° C
TO-220AC / D
TO-220AC Ins
TO-220AC / D
TO-220FPAC
TO-220AC Ins
t
t
p
p
Test conditions
= 5 µs, F = 5 kHz square
= 10 ms Sinusoidal
TO-220AC / D
TO-220FPAC
TO-220AC Ins
V
I
F
R
= 12 A
= V
2
2
PAK / TO-220FPAC
PAK
RRM
2
PAK
T
T
T
c
c
c
= 125° C
= 40° C
= 95° C
Min.
1.40
1.30
Typ
-65 to + 175
3
Value
1.9
5.4
3.1
Value
1000
120
175
30
20
12
80
Max.
2.0
1.8
1.7
10
30
STTH1210
°C/W
Unit
Unit
Unit
°C
°C
V
A
A
A
A
µA
V