T1010H STMicroelectronics, T1010H Datasheet - Page 2

• Manufacturer Part Number: T1010H
• Description: High-temperature 10A sensitive gate Triacs
• Manufacturer: STMicroelectronics

Characteristics
1
Table 2.
Table 3.
1. For both polarities of A2 referenced to A1.
2/10
V
(dI/dt)c
DSM
Symbol
Symbol
dV/dt
I
P
T(RMS)
I
I
dI/dt
V
V
T
I
G(AV)
H
TSM
I
GM
I
T
GT
I
GD
stg
GT
²
/V
L
(1)
t
j
(1)
RSM
(1)
Characteristics
Absolute maximum ratings
Electrical characteristics (T
On-state rms current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, T
I
Critical rate of rise of on-state current
I
Non repetitive surge peak off-state
voltage
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
V
V
I
I
V
Logic level, 0.1 V/µs, T
Logic level, 15 V/µs, T
²
G
T
G
t Value for fusing
D
D
D
= 100 mA
= 2 x I
= 1.2 I
= 12 V R
= V
= 67% V
DRM
GT
GT
, R
, t
DRM,
L
r
L
Test conditions
≤ 100 ns
= 33 Ω
= 3.3 kΩ
gate open, T
j
initial = 25 °C)
j
j
= 150 °C
= 150 °C
j
= 150 °C
j
Parameter
= 25 °C, unless otherwise specified)
Doc ID 15715 Rev 1
D
F = 60 Hz
F = 50 Hz
t
F = 120 Hz
t
t
p
p
p
2
= 10 ms
= 10 ms
= 20 µs
PAK, TO-220AB
Quadrant
I - II - III
I - II - III
I - II - III
I - III
II
T
t = 16.7 ms
t = 20 ms
T
T
T
T
c
j
j
j
j
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 135 °C
Min.
0.15
14.4
3.8
75
1
- 40 to + 150
- 40 to + 150
V
DRM
Max.
Value
+ 100
1.0
10
25
30
35
105
100
10
66
50
4
1
/V
RRM
T1010H
A/ms
A/µs
V/µs
Unit
Unit
mA
A
mA
mA
W
°C
A
A
V
A
V
V
²
s