STGB18N40LZ STMicroelectronics, STGB18N40LZ Datasheet - Page 4

• Manufacturer Part Number: STGB18N40LZ
• Description: EAS 180 mJ - 390 V - internally clamped IGBT
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/19
Electrical characteristics
(T
Table 4.
Table 5.
V
V
J
CES(clamped)
GE(clamped)
V
=25 °C unless otherwise specified)
Symbol
Symbol
V
V
(BR)ECS
C
I
CE(sat)
C
I
R
C
GE(th)
CES
GES
R
Q
oes
GE
ies
res
G
g
Static electrical characteristics
Dynamic electrical characteristics
Input capacitance
Output capacitance
Reverse transfer
capacitance
Gate charge
Collector emitter
clamped voltage
(V
Emitter collector
break-down voltage
(V
Gate emitter
clamped voltage
Collector cut-off
current
(V
Gate-emitter
leakage current
(V
Gate emitter
resistance
Gate resistance
Gate threshold
voltage
Collector emitter
saturation voltage
GE
GE
GE
CE
Parameter
Parameter
= 0)
= 0)
= 0)
= 0)
Doc ID 14322 Rev 5
V
V
V
V
I
T
I
I
V
V
V
V
V
V
V
V
T
V
C
C
G
GE
GE
GE
GE
GE
GE
GE
CE
GE
CE
GE
J
CE
CE
J
= 2 mA
= 75 mA
= ±2 mA
= - 40 °C to 150 °C
= 150 °C
= 25 V, f = 1 MHz,
= 0
= 280 V, I
= 5 V
= 15 V,
= 200 V,
= ±10 V
=V
=V
=V
= 4.5 V, I
= 4.5 V, I
= 3.8 V, I
CE
CE
CE
STGB18N40LZ, STGD18N40LZ, STGP18N40LZ
Test conditions
Test conditions
, I
, I
, I
C
C
C
T
T
C
C
C
= 1 mA
= 1 mA,
J
= 1 mA,
C
J
= 150 °C
= 10 A
= 10 A,
= 6 A
= 10 A,
= 150 °C
T
T
J
J
=150 °C
= -40 °C
Min. Typ. Max.
Min.
360
450
1.4
1.2
0.7
20
12
12
-
-
-
-
490
Typ.
1.35
1.30
1.30
390
625
90
29
1.6
1.6
28
16
5
Max. Unit
420
100
830
2.3
1.7
16
10
22
-
-
-
-
Unit
nC
pF
pF
pF
µA
µA
µA
kΩ
kΩ
V
V
V
V
V
V
V
V
V