STGB3NC120HD STMicroelectronics, STGB3NC120HD Datasheet - Page 3

• Manufacturer Part Number: STGB3NC120HD
• Description: 7 A, 1200 V very fast IGBT with Ultrafast diode
• Manufacturer: STMicroelectronics

STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
1
Electrical ratings
Table 2.
1.
2. V
3. Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3.
Symbol
Symbol
I
I
V
P
I
I
CP
V
CL
I
V
Calculated according to the iterative formula:
R
C
C
FSM
R
clamp
CES
T
TOT
I
ISO
GE
F
thJC
thJA
(1)
(1)
J
(2)
(3)
= 80 % V
Collector-emitter voltage (V
Continuous collector current at T
Continuous collector current at T
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Diode RMS forward current at T
Surge non repetitive forward current
t
Total dissipation at T
Insulation withstand voltage (RMS) from all
three leads to external heat sink
Operating junction temperature
p
Absolute maximum ratings
Thermal data
=10 ms sinusoidal
Thermal resistance junction-case IGBT
Thermal resistance junction-case (diode)
Thermal resistance junction-ambient
CES
, T
j
= 150 °C, R
I
C
(
T
Parameter
C
Parameter
)
=
C
Doc ID 11089 Rev 4
G
= 25 °C
-------------------------------------------------------------------------------------------------------
R
= 10 Ω, V
thj c
–
GE
×
= 0)
V
C
GE
C
C
CE sat
= 25 °C
= 25 °C
= 100 °C
= 15 V
(
T
j max
(
) max
(
)
–
)
(
T
T
C
j max
(
TO-220FP
TO-220FP
2500
)
25
,
5
6
3
I
C
(
T
-55 to 150
C
Value
Value
)
1200
62.5
± 20
3.5
)
14
20
12
3
TO-220/D²PAK
TO-220/D²PAK
Electrical ratings
1.65
14
75
7
°C/W
°C/W
°C/W
Unit
Unit
°C
W
V
A
A
A
A
V
A
A
V
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