STGW60H65DRF STMicroelectronics, STGW60H65DRF Datasheet

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STGW60H65DRF

Manufacturer Part Number
STGW60H65DRF
Description
60 A, 650 V field stop trench gate IGBT with Ultrafast diode
Manufacturer
STMicroelectronics
Datasheet

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Part Number:
STGW60H65DRF
Manufacturer:
STMicroelectronics
Quantity:
500
Features
Applications
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT is the result of a compromise
between conduction and switching losses,
maximizing the efficiency of high switching
frequency converters. Furthermore, a slightly
positive V
tight parameter distribution result in easier
paralleling operation.
Table 1.
October 2011
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Very high speed switching
Tight parameters distribution
Safe paralleling
Low thermal resistance
6 µs short-circuit withstand time
Ultrafast soft recovery antiparallel diode
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
High switching frequency converters
STGW60H65DRF
Order code
CE(sat)
60 A, 650 V field stop trench gate IGBT with Ultrafast diode
Device summary
temperature coefficient and very
GW60H65DRF
Marking
Doc ID 022346 Rev 1
Figure 1.
Package
TO-247
Internal schematic diagram
STGW60H65DRF
TO-247
1
Packaging
2
3
Tube
Preliminary data
www.st.com
1/9
9

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STGW60H65DRF Summary of contents

Page 1

... Order code STGW60H65DRF October 2011 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Figure 1. Marking Package GW60H65DRF TO-247 Doc ID 022346 Rev 1 STGW60H65DRF Preliminary data TO-247 Internal schematic diagram Packaging Tube www.st.com 1/9 ...

Page 2

... Thermal resistance junction-case diode thJC R Thermal resistance junction-ambient thJA 2/9 Parameter = ° 100 ° ° ° 400 V, CC Parameter Doc ID 022346 Rev 1 STGW60H65DRF Value Unit 650 V 120 180 A ± 180 A 360 W 6 µ 150 °C ...

Page 3

... STGW60H65DRF 2 Electrical characteristics °C unless otherwise specified. J Table 4. Static Symbol Collector-emitter breakdown voltage V (BR)CES ( Collector-emitter saturation V CE(sat) voltage V Gate threshold voltage GE(th) Collector cut-off current I CES ( Gate-emitter leakage I GES current (V Table 5. Dynamic Symbol Input capacitance C ies Output capacitance C oes ...

Page 4

... 125 °C J Parameter Test conditions di/dt = 1700 A/µ di/dt = 1630 A/µ 125 °C J Doc ID 022346 Rev 1 STGW60H65DRF Min. Typ 1.4 GE 2.55 Figure 2. If the IGBT is offered in Min. Typ. 2 125 °C 1 ...

Page 5

... STGW60H65DRF 3 Test circuits Figure 2. Test circuit for inductive load switching Figure 4. Switching waveform Td(off) Td(on) Tr(Ion) Ton Figure 3. AM01504v1 Figure 5. 90% 10 90% 10% Tr(Voff) Tcross 90% 10% Tf Toff AM01506v1 Doc ID 022346 Rev 1 Test circuits Gate charge test circuit Diode recovery time waveform ...

Page 6

... ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Table 9. TO-247 mechanical data Dim ∅P ∅R S 6/9 mm. Min. Typ. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.30 5.45 14.20 3.70 18.50 3.55 4.50 5.30 5.50 Doc ID 022346 Rev 1 STGW60H65DRF ® Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 5.60 14.80 4.30 3.65 5.50 5.70 ...

Page 7

... STGW60H65DRF Figure 6. TO-247 drawing Doc ID 022346 Rev 1 Package mechanical data 0075325_G 7/9 ...

Page 8

... Revision history 5 Revision history Table 10. Document revision history Date 11-Oct-2011 8/9 Revision 1 Initial release. Doc ID 022346 Rev 1 STGW60H65DRF Changes ...

Page 9

... STGW60H65DRF Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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