STB30NF20L STMicroelectronics, STB30NF20L Datasheet - Page 4

• Manufacturer Part Number: STB30NF20L
• Description: N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFET
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 5.
Table 6.
Table 7.
V
Symbol
Symbol
Symbol
R
V
CASE
(BR)DSS
I
I
t
t
DS(on)
C
GS(th)
C
C
Q
Q
DSS
GSS
d(on)
d(off)
Q
oss
t
t
rss
iss
gd
gs
r
f
g
=25°C unless otherwise specified).
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
Doc ID 022753 Rev 2
I
V
V
V
V
V
V
V
V
(see Figure 14)
V
R
(see Figure 13)
V
R
(see Figure 13)
D
GS
GS
GS
DS
DS
DS
DS
DD
DD
DD
G
G
= 1 mA, V
=4.7 Ω, V
=4.7 Ω, V
= V
= 5 V, I
=160 V, I
=100 V, I
=100 V, I
= 200 V,
= 200 V, Tc=125 °C
= ±20 V
=25 V, f=1 MHz, V
=10 V
Test conditions
Test conditions
Test conditions
GS
, I
D
D
= 15 A
GS
D
D
D
GS
GS
= 250 µA
=15 A,
=15 A,
= 30 A
= 0
=10 V
=10 V
GS
=0
Min.
Min.
200
Min.
1
-
-
-
-
0.065 0.075
1990
Typ.
Typ.
297
Typ.
42
65
21
7
2
14
12
68
14
STB30NF20L
Max.
Max.
±
Max.
100
10
1
3
-
-
-
-
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
ns
ns
ns
ns
V
V
Ω