STD3PK50Z STMicroelectronics, STD3PK50Z Datasheet - Page 5

• Manufacturer Part Number: STD3PK50Z
• Description: P-channel 500 V, 3 Ohm, 2.8 A DPAK, Zener-protected SuperMESH Power MOSFET
• Manufacturer: STMicroelectronics

STD3PK50Z
Table 6.
Table 7.
1.
Table 8.
The built-in-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
Symbol
BV
V
t
t
I
I
I
d(on)
d(off)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
RRM
RRM
SDM
SD
I
Q
Q
t
SD
t
t
t
GSO
r
rr
rr
f
rr
rr
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown voltage Igs ± 1mA, (open drain)
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
Doc ID 18280 Rev 1
V
R
(see
I
I
di/dt = 100 A/µs,
(see
I
di/dt=100 A/µs,
Tj=150 °C
(see
SD
SD
SD
DD
G
=4.7 Ω , V
= 2.8 A, V
= 2.8 A, V
= 2.8 A,V
Test conditions
Test conditions
Test conditions
= 250 V, I
Figure
Figure
Figure
4)
4)
GS
2)
DD
GS
DD
D
=10 V
= 60 V
=0
= 60 V
= 1.4 A,
Electrical characteristics
Min.
Min.
Min
30
-
-
-
-
-
Typ.
TBD
TBD
TBD
TBD
TBD
TBD
Typ.
Typ.
TBD
TBD
TBD
TBD
-
Max.
Max.
Max.
11.2
2.8
1.5
-
Unit
Unit
Unit
mA
nC
nC
ns
ns
ns
ns
ns
ns
A
V
A
A
V
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