STU8NM50N STMicroelectronics, STU8NM50N Datasheet - Page 3

• Manufacturer Part Number: STU8NM50N
• Description: N-channel 500 V, 0.73 Ohm, 5 A MDmesh(TM) II Power MOSFET in IPAK
• Manufacturer: STMicroelectronics

STD8NM50N, STP8NM50N, STU8NM50N
1
Electrical ratings
Table 2.
1. I
Table 3.
Table 4.
Symbol
Symbol
Symbol
R
dv/dt
R
R
P
thj-case
thj-amb
V
V
thj-pcb
E
T
SD
I
AR
I
I
TOT
T
T
DS
GS
stg
AS
D
D
l
j
(1)
≤ 7 A, di/dt ≤ 400 A/µs, V
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Total dissipation at T
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Absolute maximum ratings
Thermal data
Avalanche characteristics
j
= 25°C, I
Parameter
Parameter
Parameter
Peak
D
C
Doc ID 17413 Rev 5
= I
= 25 °C
j
< V
AR
max)
, V
(BR)DSS
DD
C
C
= 25 °C
= 100 °C
= 50 V)
, V
DS
= 80% V
(BR)DSS
DPAK
50
- 55 to 150
Value
Value
Value
IPAK
± 25
140
2.78
100
500
150
45
15
2
5
3
300
Electrical ratings
TO-220
62.5
°C/W
°C/W
°C/W
Unit
Unit
Unit
V/ns
mJ
°C
°C
°C
W
A
V
V
A
A
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