STB20NM60 STMicroelectronics, STB20NM60 Datasheet - Page 4

• Manufacturer Part Number: STB20NM60
• Description: N-Channel 600V - 0.25Ohm - 20A - D2PAK MDmesh MOSFET
• Manufacturer: STMicroelectronics

Electrical characteristics
2
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Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. C
C
V
Symbol
Symbol
R
V
CASE
oss eq.
(BR)DSS
g
I
I
DS(on)
C
increases from 0 to 80% V
GS(th)
C
GSS
C
Q
Q
DSS
fs
Q
R
oss eq.
oss
rss
iss
gd
gs
g
g
(1)
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source breakdown
voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
.
= 0)
V
I
V
V
V
V
D
V
I
V
V
V
480 V
V
V
(see Figure 16)
f = 1 MHz Gate DC
bias=0 Test signal
level = 20 mV
open drain
D
GS
GS
DS
DS
DS
DS
DS
GS
GS
DD
GS
= 250 µA, V
= 10 A
= Max rating,@125°C
Test conditions
= Max rating
= ± 30V
= V
= 10V, I
Test conditions
> I
= 25V, f = 1 MHz,
= 0
= 0V, V
= 10V
= 480 V, I
D(on)
GS
, I
D
D
DS
x R
= 10 A
GS
= 250 µA
D
= 0V to
DS(on)max,
= 20 A,
= 0
Min.
Min.
600
3
1500
Typ.
Typ.
0.25
350
215
1.6
11
35
39
10
20
4
oss
±100
Max.
Max.
0.29
when V
10
54
1
5
DS
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
S
Ω