MJD127 STMicroelectronics, MJD127 Datasheet - Page 6

• Manufacturer Part Number: MJD127
• Description: COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
• Manufacturer: STMicroelectronics

Electrical characteristics
6/12
Figure 8.
Figure 10. Base-emitter on voltage for NPN
Figure 12. Resistive load switching times for
V
V
BE(sat)
(V)
BE(on)
(V)
t(ns)
2.0
1.5
1.0
0.5
100
2.0
1.5
1.0
0.5
10
0.1
0.1
Base-emitter saturation voltage for
NPN type
type
NPN type (on)
0
h
V
FE
CE
V cc = 30 V
h FE =250
Vbeoff= - 5 V
Ibon= - Iboff
= 250
= 3 V
1
2
3
1
1
4
Delay time
Rise time
T j = -40 °C
T j = 25 °C
T j =125 °C
T j = -40 °C
T j = 25 °C
T j =125 °C
5
I c (A)
I c (A)
I c (A)
AM00700v1
AM03262v1
AM03264v1
Doc ID 3541 Rev 11
Figure 9.
Figure 11. Base-emitter on voltage for PNP
Figure 13. Resistive load switching times for
V
BE(sat)
V
(V)
BE(on)
(V)
-2.0
-1.5
-1.0
-0.5
t(ns)
-2.0
-1.5
-0.5
-1.0
100
10
-0.1
- 0.1
Base-emitter saturation voltage for
PNP type
type
PNP type (on)
0
h
V
FE
V cc = -30 V
h FE =250
Vbeoff= 5 V
-Ibon= Iboff
CE
= 250
-1
= -3 V
-2
-3
-1
-1
-4
Delay time
Rise time
MJD122, MJD127
T j = -40 °C
T j = 25 °C
T j =125 °C
T j = -40 °C
T j = 25 °C
T j =125 °C
-5
I c (A)
I c (A)
I c (A)
AM03261v1
AM03263v1
AM03265v1