MJD45H11 STMicroelectronics, MJD45H11 Datasheet - Page 3

• Manufacturer Part Number: MJD45H11
• Description: COMPLEMENTARY SILICON PNP TRANSISTORS
• Manufacturer: STMicroelectronics

2
Note:
2.1
Electrical characteristics
T
Table 4.
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
For PNP types voltage and current values are negative.
Typical characteristic (curves)
Figure 2.
V
case
V
V
CEO(sus)
Symbol
CE(sat)
BE(sat)
h
I
I
CES
EBO
FE
= 25 °C; unless otherwise specified.
(1)
(1)
(1)
(1)
Electrical characteristics
Safe operating area
Collector-emitter
sustaining voltage (I
Collector cut-off current
(V
Emitter cut-off current
(I
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
DC current gain
C
BE
= 0)
= 0)
Parameter
Doc ID 5470 Rev 3
B
= 0)
I
V
V
I
I
I
I
C
C
C
C
C
CE
EB
= 8 A
= 8 A
= 2
= 4
= 30 mA
= 5 V
= 80 V
Test conditions
A_
A_ _
Figure 3.
V
V
I
I
B
B
CE
CE
= 0.4 A
= 0.8 A
= 1 V
= 1 V
Derating curves
Min.
80
60
40
Typ.
-
-
-
-
-
-
-
Max.
1.5
10
50
1
Unit
µA
µA
V
V
V
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