MJD350 STMicroelectronics, MJD350 Datasheet - Page 2

• Manufacturer Part Number: MJD350
• Description: COMPLEMENTARY SILICON POWER TRANSISTORS
• Manufacturer: STMicroelectronics

MJD340 / MJD350
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
For PNP type voltage and current values are negative.
2/5
Safe Operating Area
V
Pulsed: Pulse duration = 300 s, duty cycle
Symbol
R
R
CEO(sus)
thj-case
h
I
I
thj-amb
CBO
EBO
FE
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Collector Cut-off
Current (v
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
(I
DC Current Gain
C
B
= 0)
= 0)
Parameter
BE
= 0)
2 %
V
V
I
I
C
C
CB
EB
= 1 mA
= 50 mA
= 3 V
= 300 V
case
= 25
Test Conditions
o
C unless otherwise specified)
V
CE
Derating Curve
= 10 V
Max
Max
Min.
300
30
Typ.
8.33
100
Max.
240
0.1
0.1
o
o
Unit
mA
mA
C/W
C/W
V