ST8812FX STMicroelectronics, ST8812FX Datasheet

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ST8812FX

Manufacturer Part Number
ST8812FX
Description
High voltage fast-switching NPN Power transistor
Manufacturer
STMicroelectronics
Datasheet

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Features
Applications
Description
The ST8812FX is manufactured using latest Multi
Epitaxial Planar technology with high voltage
capability. It shows wide R.B.S.O.A. and high
switching speed thanks to its Cellular Emitter
structure with planar edge termination and deep
base diffusion.
March 2006
High voltage capability
Very high switching speed
Tight hfe control
Large R.B.S.O.A.
Fully insulated Package U.L. compliant for
easy mounting
Switch mode power supplies for crt TV
Part Number
ST8812FX
ST8812FX
Marking
Rev 1
Internal schematic diagram
ISOWATT218FX
Package
High voltage fast-switching
NPN Power transistor
ISOWATT218FX
ST8812FX
1
2
Packing
TUBE
3
www.st.com
1/10
10

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ST8812FX Summary of contents

Page 1

... Fully insulated Package U.L. compliant for easy mounting Applications Switch mode power supplies for crt TV Description The ST8812FX is manufactured using latest Multi Epitaxial Planar technology with high voltage capability. It shows wide R.B.S.O.A. and high switching speed thanks to its Cellular Emitter structure with planar edge termination and deep base diffusion ...

Page 2

... Storage Temperature STG T Max. Operating Junction Temperature J Table 2. Thermal data Symbol R Thermal Resistance thJ-case 2/10 Parameter = < 5ms 25°C c Parameter Junction-Case__________________ ST8812FX Value 1150 600 2500 -65 to 150 150 Value __Max 2.5 Unit °C ° ...

Page 3

... ST8812FX 2 Electrical characteristics (T = 25°C; unless otherwise specified) CASE Electrical characteristics Table 3. Symbol Parameter Collector Cut-off Current I CES ( Emitter Cut-off Current I EBO ( Collector-Emitter CEO(sus) Sustaining Voltage (I Note CE(sat) Collector-Emitter Saturation Voltage Note BE(sat) Base-Emitter Saturation Voltage ...

Page 4

... Electrical characteristics 2.1 Typical characteristics test circuit Figure 1. DC current gain Figure 3. Collector emitter saturation voltage Figure 4. Figure 5. Inductive load storage time 4/10 Figure 2. DC current gain Base emitter saturation voltage Figure 6. Inductive load fall time ST8812FX ...

Page 5

... ST8812FX Figure 7. Reverse biased S.O.A. Electrical characteristics 5/10 ...

Page 6

... Electrical characteristics Figure 8. Inductive load switching test circuit 6/10 ST8812FX ...

Page 7

... ST8812FX 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 8

... Maximum Torque (applied to mounting flange) Recommended: 0.55 Nm; Maximum The side of the dissipator must be flat within 80 µm 8/10 ISOWATT218FX MECHANICAL DATA mm TYP. MAX. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 5.45 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15.00 2.20 4.20 3.80 ST8812FX inch MIN. TYP. MAX. 0.209 0.224 0.110 0.126 0.122 0.138 0.071 0.087 0.031 0.043 0.026 0.037 0.071 0.087 0.406 0.453 0.215 0.602 0.618 0.354 0.402 0.898 ...

Page 9

... ST8812FX 4 Revision History Table 4. Revision history Date Revision 23-Feb-2006 1 Initial release. Revision History Changes 9/10 ...

Page 10

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 10/10 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com ST8812FX ...

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