ST13007D STMicroelectronics, ST13007D Datasheet

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ST13007D

Manufacturer Part Number
ST13007D
Description
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Manufacturer
STMicroelectronics
Datasheet

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APPLICATIONS
DESCRIPTION
The device is manufactured using high voltage
Multi
switching speeds and high voltage capability.
It uses a Cellular Emitter structure to enhance
switching speeds.
ABSOLUTE MAXIMUM RATINGS
April 2003
Symbol
IMPROVED SPECIFICATION:
- LOWER LEAKAGE CURRENT
- TIGHTER GAIN RANGE
- DC CURRENT GAIN PRESELECTION
- TIGHTER STORAGE TIME RANGE
HIGH VOLTAGE CAPABILITY
INTEGRATED FREE-WHEELING DIODE
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125
LARGE RBSOA
UP TO 120W ELECTRONIC
TRANSFORMERS FOR HALOGEN LAMPS
SWITCH MODE POWER SUPPLIES
V
V
V
T
P
I
I
CEV
CEO
EBO
I
CM
I
BM
T
stg
C
B
tot
j
Epitaxial Planar
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
technology for high
Parameter
c
C
25
= 0)
B
o
BE
o
C
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
= -1.5V)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
700
400
150
16
80
TO-220
9
8
4
8
ST13007D
1
2
3
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/7

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ST13007D Summary of contents

Page 1

... Total Dissipation at T tot T Storage Temperature stg T Max. Operating Junction Temperature j April 2003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR o C INTERNAL SCHEMATIC DIAGRAM = -1.5V ST13007D TO-220 Value Unit 700 V 400 -65 to 150 ...

Page 2

... ST13007D THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) ...

Page 3

... Safe Operating Area DC Current Gain Collector Emitter Saturation Voltage Derating Curve DC Current Gain Base Emitter Saturation Voltage ST13007D 3/7 ...

Page 4

... ST13007D Diode Forward Voltage Switching Time Inductive Load 4/7 Switching Time Resistive Load Reverse Biased SOA ...

Page 5

... Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor ST13007D 5/7 ...

Page 6

... ST13007D DIM. MIN. A 4.40 C 1.23 D 2.40 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.40 H2 10. 13.00 L5 2.65 L6 15.25 L7 6.20 L9 3.50 M DIA. 3.75 6/7 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 16.40 14.00 2.95 15.75 6.60 3.93 2.60 3.85 inch MIN. TYP. MAX. 0.173 0.181 0.048 0.052 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.067 0.044 0.067 0.194 0.202 0.094 0.106 0.394 0.409 ...

Page 7

... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com ST13007D 7/7 ...

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