STAP57060 STMicroelectronics, STAP57060 Datasheet - Page 6

• Manufacturer Part Number: STAP57060
• Description: RF Power LDMOS transistor in STAP1 package
• Manufacturer: STMicroelectronics

Typical performance
6/16
5
Figure 3.
Figure 5.
Figure 7.
C (pF)
1000
VGS (Normalized)
1.06
1.04
1.02
0.98
0.96
0.94
0.92
100
Gp (dB)
18
16
14
12
10
10
8
6
4
2
1
1
-25
0
0
VDS = 10 V
Typical performance
Capacitance vs. supply voltage
Gate-source voltage vs. case
temperature
Power gain vs. output power
10
5
0
20
10
30
25
Pout (W)
890MHz
Tc (°C)
VDS (V)
40
15
Crss
50
50
Id = 1 A
960MHz
20
925MHz
Ciss
Coss
60
Id = 0.5 A
75
VDS=28V
IDQ=100mA
25
Id = 2 A
Id = 5 A
70
f = 1 MHz
945MHz
Id = 4 A
Id = 3 A
100
80
30
Doc ID 15708 Rev 1
Figure 4.
Figure 6.
Figure 8.
Nd (%)
70
60
50
40
30
20
Pout (W)
80
70
60
50
40
30
20
10
Id (A)
8
7
6
5
4
3
0
2
1
0
2
0
0
Drain current vs. gate-source
voltage
Output power vs. input power
Drain efficiency vs. output power
2.5
10
0.5
20
3
1
925MHz
3.5
1.5
30
890MHz
Pout (W)
VGS (V)
Pin (W)
40
4
2
890MHz
4.5
945MHz
2.5
50
960MHz
945MHz
60
5
3
925MHz
960MHz
VDS=10 V
VDS=28V
IDQ=100mA
VDS=28V
IDQ=100mA
5.5
3.5
70
STAP57060
6
80
4