AP1002BMX Advanced Power Electronics Corp., AP1002BMX Datasheet
AP1002BMX
Specifications of AP1002BMX
Related parts for AP1002BMX
AP1002BMX Summary of contents
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... Electronics Corp. ▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.7mm ) Description The AP1002BMX used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. TM ...
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... AP1002BMX Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 2 I =32A D V =10V G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 0.8 0.6 0.4 0.2 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP1002BMX o 10V T =150 C A 7.0V 6.0V 5.0V V =4.0V G 2.0 3.0 4.0 5 Drain-to-Source Voltage ( 100 Junction Temperature ( 100 150 o T ...
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... AP1002BMX 10 I =25A =15V DS V =18V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area 100 limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...