AP1002BMX Advanced Power Electronics Corp., AP1002BMX Datasheet - Page 3

• Manufacturer Part Number: AP1002BMX
• Description: The AP1002BMX used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP1002BMX

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 1.8
• Rds(on) / Max(m?) Vgs@4.5v: 3
• Qg (nc): 29
• Qgs (nc): 6.5
• Qgd (nc): 14
• Id(a): 180
• Pd(w): 89
• Configuration: Single N
• Package: GreenFET-MX

240
200
160
120
2.6
2.2
1.8
1.4
30
20
10
80
40
0
0
3
1
0.0
0
Fig 1. Typical Output Characteristics
2
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
Reverse Diode
V
V
SD
DS
GS
1.0
4
T
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
j
=150
0.4
T
o
A
C
=25
2.0
0.6
6
o
C
T
I
D
A
=25
=25A
0.8
℃
3.0
8
T
j
V
=25
1
G
=4.0V
o
7.0V
6.0V
5.0V
10V
C
4.0
1.2
10
200
160
120
1.4
1.2
0.8
0.6
0.4
0.2
1.6
1.2
0.8
0.4
80
40
0
1
2
0.0
-50
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=32A
=10V
Junction Temperature
1.0
v.s. Junction Temperature
V
T
DS
0
T
0
j
,Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
2.0
T
A
=150
50
3.0
50
o
C
AP1002BMX
4.0
100
100
o
C)
o
C)
V
5.0
G
=4.0V
7.0V
6.0V
5.0V
10V
150
6.0
150
3