AP1002BMX Advanced Power Electronics Corp., AP1002BMX Datasheet - Page 4
AP1002BMX
Manufacturer Part Number
AP1002BMX
Description
The AP1002BMX used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP1002BMX.pdf
(4 pages)
Specifications of AP1002BMX
Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
1.8
Rds(on) / Max(m?) Vgs@4.5v
3
Qg (nc)
29
Qgs (nc)
6.5
Qgd (nc)
14
Id(a)
180
Pd(w)
89
Configuration
Single N
Package
GreenFET-MX
AP1002BMX
1000
0.01
100
0.1
10
10
8
6
4
2
0
1
0.01
Fig 11. Switching Time Waveform
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Operation in this area
limited by R
Single Pulse
T
10%
90%
I
V
V
A
D
DS
GS
=25
=25A
DS(ON)
10
o
V
C
Q
DS
0.1
t
G
d(on)
, Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
V
20
DS
DS
V
t
=15V
r
DS
=18V
=24V
30
1
40
t
d(off)
10
t
f
50
100ms
100us
10ms
1ms
DC
1s
60
100
Fig10. Effective Transient Thermal Impedance
6000
5000
4000
3000
2000
1000
0.001
0.01
0
0.1
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
Single Pulse
V
Duty factor = 0.5
0.02
0.05
0.01
0.1
0.2
G
5
0.001
Q
V
DS
GS
9
, Drain-to-Source Voltage (V)
0.01
t , Pulse Width (s)
Q
Q
13
Charge
G
GD
0.1
17
1
P
DM
Duty Factor = t/T
Peak T
Rthja = 45℃/W
21
j
= P
t
DM
T
10
f=1.0MHz
x R
25
thjc
C
C
C
+ T
Q
iss
oss
rss
C
100
29
4