AP4509GM Advanced Power Electronics Corp., AP4509GM Datasheet - Page 4

• Manufacturer Part Number: AP4509GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4509GM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: ±20V
• Rds(on) / Max(m?) Vgs@4.5v: 14
• Rds(on) / Max(m?) Vgs@2.5v: 20
• Qg (nc): 23
• Qgs (nc): 6
• Qgd (nc): 14
• Id(a): 10
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
AP4509GM
160
140
120
100
80
60
40
20
18
15
12
10
0
9
8
6
4
2
0
0
3
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
A
= 25
T
0.2
V
V
Reverse Diode
V
j
SD
=150
DS
o
GS
C
1
5
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
o
0.4
C
0.6
2
7
0.8
T
T
I
3
A
9
D
j
=25
=25
= 5 A
V
1
G
o
4.5V
=3.0V
5.0V
o
7.0V
C
10V
C
1.2
4
11
140
120
100
1.6
1.4
1.2
1.0
0.8
0.6
2.5
2.0
1.5
1.0
80
60
40
20
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
D
T
G
= 9 A
A
=10V
= 150
v.s. Junction Temperature
Junction Temperature
V
T
T
DS
j
1
0
0
j
o
, Junction Temperature (
, Junction Temperature (
C
, Drain-to-Source Voltage (V)
2
50
50
100
3
100
o
o
C)
C)
V
G
4.5V
=3.0V
5.0V
7.0V
10V
150
4
150
4