AP9410GM Advanced Power Electronics Corp., AP9410GM Datasheet

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... Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP9410GM Pb Free Plating Product BV 30V DSS R 6mΩ DS(ON) I 18A Rating Units 30 ± ...

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... AP9410GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... D 1 =10V G 1.4 1.2 1 0.8 0.6 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9410GM o C 10V 6.0V 5.0V 4.5V V =2.5V G 0 Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...

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... AP9410GM =15V DS V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11 ...