AP9410GM Advanced Power Electronics Corp., AP9410GM Datasheet - Page 4

• Manufacturer Part Number: AP9410GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9410GM

• Vds: 30V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 5
• Rds(on) / Max(m?) Vgs@4.5v: 6
• Rds(on) / Max(m?) Vgs@2.5v: 8
• Qg (nc): 59
• Qgs (nc): 10
• Qgd (nc): 23
• Id(a): 18
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

AP9410GM
0.01
100
0.1
10
16
12
8
4
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
Single Pulse
T
V
90%
10%
V
I
A
DS
D
GS
=25
= 18 A
V
DS
Q
o
C
40
V
V
V
G
t
, Drain-to-Source Voltage (V)
d(on)
DS
DS
DS
, Total Gate Charge (nC)
1
=15V
=20V
=24V
t
r
80
10
t
d(off)
120
t
f
1ms
10ms
100ms
1s
DC
100
160
Fig 10. Effective Transient Thermal Impedance
10000
0.001
1000
100
0.01
0.1
0.0001
1
Fig 8. Typical Capacitance Characteristics
1
4.5V
Fig 12. Gate Charge Waveform
V
Duty factor =0.5
G
0.001
0.01
5
0.05
0.1
0.02
0.2
Single pulse
Q
V
GS
0.01
DS
9
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
Q
Q
13
0.1
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
Rthia=125 ℃
21
10
j
t
= P
℃ ℃
℃ /W
DM
T
f=1.0MHz
x R
100
25
thja
Coss
Q
Crss
+ T
Ciss
a
1000
29