AP9410GM Advanced Power Electronics Corp., AP9410GM Datasheet - Page 3

• Manufacturer Part Number: AP9410GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9410GM

• Vds: 30V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 5
• Rds(on) / Max(m?) Vgs@4.5v: 6
• Rds(on) / Max(m?) Vgs@2.5v: 8
• Qg (nc): 59
• Qgs (nc): 10
• Qgd (nc): 23
• Id(a): 18
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

270
240
210
180
150
120
90
60
30
11
18
16
14
12
10
0
8
6
4
2
0
9
7
5
3
0.0
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
T
A
=25
j
=150
V
0.2
2
V
V
Reverse Diode
DS
GS
o
SD
C
, Drain-to-Source Voltage (V)
o
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
C
1.0
0.4
4
0.6
6
2.0
0.8
8
T
j
I
T
=25
D
A
V
=18A
=25 ℃ ℃ ℃ ℃
10
o
G
1
C
=2.5V
6.0V
5.0V
4.5V
10V
3.0
12
1.2
140
120
100
1.8
1.6
1.4
1.2
0.8
0.6
1.5
0.5
80
60
40
20
0
1
2
1
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
I
A
D
G
=150
=18A
=10V
V
v.s. Junction Temperature
Junction Temperature
T
DS
T
o
j
0.5
C
, Junction Temperature (
j
0
0
, Drain-to-Source Voltage (V)
, Junction Temperature (
1
50
50
AP9410GM
1.5
100
100
o
o
C)
C)
V
G
=2.5V
6.0V
5.0V
4.5V
10V
150
150
2