AP9410GM Advanced Power Electronics Corp., AP9410GM Datasheet - Page 2

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9410GM

Manufacturer Part Number
AP9410GM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9410GM

Vds
30V
Vgs
±12V
Rds(on) / Max(m?) Vgs@10v
5
Rds(on) / Max(m?) Vgs@4.5v
6
Rds(on) / Max(m?) Vgs@2.5v
8
Qg (nc)
59
Qgs (nc)
10
Qgd (nc)
23
Id(a)
18
Pd(w)
2.5
Configuration
Single N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9410GM
Manufacturer:
APM
Quantity:
20 000
Part Number:
AP9410GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
t
Q
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
Electrical Characteristics@T
Source-Drain Diode
AP9410GM
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board ; 125 ℃/W when mounted on min. copper pad.
Parameter
Parameter
2
2
2
j
j
j
=25
=70
=25
o
o
C)
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
=18A
=1A
G
D
=18A, V
=18A,
=15Ω
=3.3Ω,V
=V
=10V, I
=30V, V
=24V, V
=24V
=15V
=25V
=0V, I
=10V, I
=4.5V, I
=2.5V, I
=
=4.5V
=0V
± 12V
GS
Test Conditions
Test Conditions
V
, I
D
GS
GS
D
=250uA
D
D
D
D
=250uA
GS
GS
GS
=12A
=0V
=18A
=0
=12A
=6A
=10V
=0V
=0V
V
,
D
=1mA
Min.
Min.
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5080 8100
Typ.
0.01
Typ.
660
400
47
59
10
23
16
12
96
30
43
39
-
-
-
-
-
-
-
-
-
±100
Max. Units
Max. Units
1.2
1.2
25
95
5
6
8
1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
uA
uA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V

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