AP4511GM Advanced Power Electronics Corp., AP4511GM Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4511GM

Manufacturer Part Number
AP4511GM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4511GM

Vds
35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
25
Rds(on) / Max(m?) Vgs@4.5v
37
Qg (nc)
11
Qgs (nc)
3
Qgd (nc)
6
Id(a)
7
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Low On-resistance
▼ ▼ ▼ ▼ Fast Switching Performance
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
Parameter
1
D1
D1
D1
D1
SO-8
SO-8
3
3
D2
D2
D2
D2
S1
S1
3
G1
G1
S2
S2
G2
G2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
N-CH BV
P-CH BV
Max.
±20
G1
35
5.7
30
Pb Free Plating Product
7
-55 to 150
-55 to 150
Rating
0.016
2.0
R
I
R
I
D
D
P-channel
DS(ON)
DS(ON)
DSS
DSS
Value
62.5
D1
S1
-6.1
±20
-35
-30
-5
G2
AP4511GM
25mΩ
40mΩ
-6.1A
-35V
Units
W/℃
℃/W
35V
Unit
201122041
7A
W
V
V
A
A
A
D2
S2

Related parts for AP4511GM

AP4511GM Summary of contents

Page 1

... Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO SO-8 S1 N-channel Parameter 3 AP4511GM Pb Free Plating Product N-CH BV 35V DSS R 25mΩ DS(ON P-CH BV -35V DSS R 40mΩ DS(ON) I -6. Rating Units P-channel ...

Page 2

... AP4511GM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... D V =-28V DS V =-4. =-18V =3.3Ω, =18Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.7A =-6A dI/dt=-100A/µs AP4511GM Min. Typ. Max. Units -35 - =-1mA - -0. =-250uA - ...

Page 4

... AP4511GM N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 5

... DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 AP4511GM f=1.0MHz Drain-to-Source Voltage (V) DS Fig 8. Typical Capacitance Characteristics Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse Duty factor = t/T Peak ...

Page 6

... AP4511GM P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0. 0.001 0.0001 10 100 Fig 10. Effective Transient Thermal Impedance o T =150 Fig 12. Gate Charge Waveform AP4511GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T Peak T ...

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