IXTM67N10 IXYS, IXTM67N10 Datasheet - Page 3

• Manufacturer Part Number: IXTM67N10
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTM67N10

• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 67
• Rds(on), Max, Tj=25°c, (?): 0.025
• Ciss, Typ, (pf): -
• Qg, Typ, (nc): 260
• Trr, Typ, (ns): -
• Pd, (w): -
• Rthjc, Max, (k/w): -
• Package Style: TO-204

Voltage
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2003 IXYS All rights reserved
200
150
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
50
80
60
40
20
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-50
0
Fig. 3 R
Fig. 5 Drain Current vs.
Fig. 1 Output Characteristics
T
J
T
= 25°C
-25
20
J
= 25°C
Case Temperature
DS(on)
40
0
75N10
67N10
T
vs. Drain Current
60
25
I
C
D
V
- Degrees C
- Amperes
DS
80
50
- Volts
V
GS
100 120 140 160
75
= 10V
V
GS
100 125 150
V
= 15V
GS
= 10V
8V
9V
6V
5V
7V
IXTH / IXTM 67N10 IXTH / IXTM 75N10
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
150
125
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
75
50
25
0
-50
-50
0
Fig. 4
Fig. 6
Fig. 2
1
-25
-25
V
GS(th)
2
0
0
3
Temperature Dependence
of Drain to Source Resistance
Temperature Dependence of
Breakdown and Threshold
Input Admittance
T
T
T
J
25
25
J
J
= 125°C
V
4
- Degrees C
- Degrees C
GS
I
D
= 37.5A
IXTT 75N10
50
50
- Volts
5
6
75
75
T
J
= 25°C
7
100 125 150
100 125 150
BV
8
DSS
9
10
3