IXTM75N10 IXYS, IXTM75N10 Datasheet
IXTM75N10
Specifications of IXTM75N10
Related parts for IXTM75N10
IXTM75N10 Summary of contents
Page 1
... 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. © 2003 IXYS All rights reserved IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 Maximum Ratings 100 = 1 MΩ ...
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... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ TO-268 (IXTT) Outline IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: IXTH / IXTM 67N10 IXTH / IXTM 75N10 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...
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... Fig. 5 Drain Current vs. Case Temperature Voltage 80 75N10 67N10 -50 - Degrees C C IXYS reserves the right to change limits, test conditions, and dimensions. © 2003 IXYS All rights reserved IXTH / IXTM 67N10 IXTH / IXTM 75N10 V = 10V 2.50 2.25 2.00 1.75 = 10V 1.50 1.25 ...
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... V - Volts DS Fig.11 Transient Thermal Impedance D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: IXTH / IXTM 67N10 IXTH / IXTM 75N10 100 10 1 150 125 C 100 iss oss 25 C rss ...