IXTM50N20 IXYS, IXTM50N20 Datasheet - Page 4

• Manufacturer Part Number: IXTM50N20
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTM50N20

• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.045
• Ciss, Typ, (pf): -
• Qg, Typ, (nc): -
• Trr, Typ, (ns): -
• Pd, (w): -
• Rthjc, Max, (k/w): -
• Package Style: TO-204

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0.001
4500
4000
3500
3000
2500
2000
1500
1000
0.01
500
0.1
0.00001
14
12
10
8
6
4
2
0
0
0
0
Fig.7 Gate Charge Characteristic Curve
Fig.9 Capacitance Curves
Fig.11 Transient Thermal Impedance
D=0.05
D=0.5
D=0.1
D=0.02
D=0.01
Single pulse
D=0.2
V
I
I
D
G
DS
= 50A
= 10mA
25
= 100V
5
Gate Charge - nCoulombs
50
C
C
C
iss
oss
rss
75
0.0001
10
V
f = 1 MHz
V
DS
DS
100 125 150 175 200
- Volts
= 25V
15
20
0.001
25
Time - Seconds
0.01
100
10
50
40
30
20
10
1
0
0.2
Fig.8 Forward Bias Safe Operating Area
Fig.10 Source Current vs. Source
1
Limited by R
0.1
to Drain Voltage
0.4
DS(on)
V
V
10
SD
DS
T
J
0.6
- Volts
- Volts
= 125°C
1
IXTH 50N20
IXTM 50N20
0.8
100
T
J
= 25°C
1.0
10
100µs
1ms
10µs
10ms
100ms
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