IXTQ69N30PM IXYS, IXTQ69N30PM Datasheet

no-image

IXTQ69N30PM

Manufacturer Part Number
IXTQ69N30PM
Description
Manufacturer
IXYS
Datasheet

Specifications of IXTQ69N30PM

Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
25
Rds(on), Max, Tj=25°c, (?)
0.049
Ciss, Typ, (pf)
4960
Qg, Typ, (nc)
156
Trr, Typ, (ns)
250
Pd, (w)
90
Rthjc, Max, (k/w)
1.38
Package Style
OVERMOLDED
Polar
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
T
T
Transient
T
T
T
T
I
T
1.6 mm (0.062 in.) from Case for 10 s
Plastic Body for 10 s
Mounting Torque
V
V
V
V
V
Test Conditions
Continuous
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 25°C to 150°C
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
D
, V
DD
D
D
= 250μA
= 250μA
= 34.5A, Note 1
≤ V
GS
DS
= 0V
= 0V
DSS
, T
J
GS
=150°C
= 1 MΩ
Advance Technical Information
T
J
= 125°C
JM
IXTQ69N30PM
300
Min.
2.5
Characteristic Values
- 55 ... +150
Maximum Ratings
- 55 ... +150
1.13/10
Typ.
± 20
± 30
150
300
260
300
300
200
2.5
1.5
25
69
15
90
Nm/lb.in.
Max.
±100 nA
100 μA
5.0
49 mΩ
5 μA
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
J
V
I
R
OVERMOLDED
(IXTQ...M) OUTLINE
G = Gate
S = Source
Features
Advantages
Applications
D25
Plastic Overmolded Tab for Electrical
Isolation
Avalanche Rated
Fast Intrinsic Diode
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS(on)
DSS
G
D
= 25A
= 300V
≤ ≤ ≤ ≤ ≤
S
D = Drain
49mΩ Ω Ω Ω Ω
DS100204(10/09)

Related parts for IXTQ69N30PM

IXTQ69N30PM Summary of contents

Page 1

... GSS DSS DS DSS 10V 34.5A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTQ69N30PM Maximum Ratings 300 = 1 MΩ 300 GS ± 20 ± 200 JM 69 1.5 =150° ... +150 150 - 55 ... +150 300 260 1 ...

Page 2

... 34.5A 32 DSS D 79 Characteristic Values Min. Typ. JM 250 3.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTQ69N30PM OVERMOLDED (IXTQ...M) OUTLINE Max 1.38 °C/W Max 270 A 1 μC 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 ...

Page 3

... Value 125º 25º 100 120 140 160 180 IXTQ69N30PM Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V GS -50 ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions 125ºC J 25ºC - 40ºC 5.5 6.0 6.5 7 25ºC J 0.9 1.0 1.1 1.2 1.3 1,000.0 C iss 100.0 C oss C rss IXTQ69N30PM Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 150V ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 0.1 Pulse Width - Seconds IXTQ69N30PM 1 10 100 IXYS REF: T_69N30P(7S)10-16-09-A ...

Related keywords