IXTM40N30 IXYS, IXTM40N30 Datasheet

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IXTM40N30

Manufacturer Part Number
IXTM40N30
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTM40N30

Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
40
Rds(on), Max, Tj=25°c, (?)
0.085
Ciss, Typ, (pf)
-
Qg, Typ, (nc)
-
Trr, Typ, (ns)
-
Pd, (w)
-
Rthjc, Max, (k/w)
-
Package Style
TO-204
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
Symbol
V
V
I
I
R
DM
D25
GSS
DSS
GS
GSM
JM
stg
DSS
DGR
D
J
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t 300 s, duty cycle d 2 %
V
J
J
C
C
C
GS
GS
GS
DS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
TM
GS
, I
FET
D
D
DC
D
= 250 A
= 250 A
DSS
, V
= 0.5 I
DS
= 0
D25
GS
= 1 M
T
T
IXTH35N30
IXTH40N30
IXTM40N30
J
J
= 25 C
= 125 C
(T
J
= 25 C, unless otherwise specified)
JM
IXTH 35N30
IXTH 40N30
IXTM 40N30
35N30
40N30
35N30
40N30
TO-204 = 18 g, TO-247 = 6 g
min.
300
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
300
300
140
160
300
150
300
20
30
35
40
0.085
0.088
max.
0.10
100
200
4
1
mA
W
nA
V
V
V
V
A
A
A
A
V
V
C
C
C
C
A
TO-247 AD (IXTH)
TO-204 AE (IXTM)
G = Gate,
S = Source,
Features
l
l
l
l
l
Applications
l
l
l
l
Advantages
l
l
l
300 V
300 V
300 V
International standard packages
Low R
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
V
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
DSS
DS (on)
HDMOS
35 A
40 A
40 A
I
D
D = Drain,
TAB = Drain
D25
TM
G
process
0.10
0.085
0.088
R
D (TAB)
91535E(5/96)
DS(on)
1 - 4

Related parts for IXTM40N30

IXTM40N30 Summary of contents

Page 1

... Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 Characteristic Values ( unless otherwise specified) J min. typ. max. 300 125 C J IXTH35N30 IXTH40N30 0.085 IXTM40N30 0.088 V I DSS D25 300 300 300 TO-247 AD (IXTH TO-204 AE (IXTM ...

Page 2

... Characteristic Values ( unless otherwise specified) J min. typ. 35N30 40N30 35N30 40N30 JM = 100 V 400 R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXTH 35N30 IXTH 40N30 IXTM 40N30 TO-247 AD (IXTH) Outline max ...

Page 3

... I - Amperes D Fig. 5 Drain Current vs. Case Temperature 50 40N30 40 35N30 -50 - Degrees C C © 2000 IXYS All rights reserved 15V 80 100 120 75 100 125 150 IXTH 35N30 IXTH 40N30 IXTM 40N30 Fig. 2 Input Admittance 25° ...

Page 4

... Vds - Volts Fig.11 Transient Thermal Impedance 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved IXTH 35N30 Fig.8 Forward Bias Safe Operating Area Limited by R 100 Fig.10 Source Current vs. Source 0.0 ...

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