IXTP22N50PM IXYS, IXTP22N50PM Datasheet - Page 4

• Manufacturer Part Number: IXTP22N50PM
• Manufacturer: IXYS

Specifications of IXTP22N50PM

• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 8.0
• Rds(on), Max, Tj=25°c, (?): 0.27
• Ciss, Typ, (pf): 2880
• Qg, Typ, (nc): 50
• Trr, Typ, (ns): 400
• Pd, (w): 43
• Rthjc, Max, (k/w): 2.9
• Package Style: TO-220 OVERMOLED

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
40
35
30
25
20
15
10
80
70
60
50
40
30
20
10
10
5
0
0
3.0
0.3
0
0.4
3.5
5
f
= 1 MHz
0.5
4.0
Fig. 9. Forward Voltage Drop of
10
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
4.5
15
T
Intrinsic Diode
J
V
V
V
= 125ºC
SD
GS
DS
0.7
- Volts
- Volts
- Volts
5.0
20
T
J
= 125ºC
0.8
- 40ºC
25ºC
5.5
25
C oss
C rss
T
0.9
C iss
J
= 25ºC
6.0
30
1.0
6.5
35
1.1
1.2
7.0
40
100.00
10.00
1.00
0.10
0.01
40
35
30
25
20
15
10
10
5
0
9
8
7
6
5
4
3
2
1
0
1
0
0
V
I
I
R
T
T
Single Pulse
D
G
DS
J
C
DS(on)
= 11A
= 10mA
= 150ºC
= 25ºC
5
4
= 250V
Fig. 12. Forward-Bias Safe Operating Area
Limit
10
8
Fig. 8. Transconductance
15
12
10
Fig. 10. Gate Charge
Q
G
I
- NanoCoulombs
D
20
V
16
DS
- Amperes
IXTP22N50PM
- Volts
25
20
30
24
100
T
J
35
= - 40ºC
28
25ºC
125ºC
40
32
45
1s
DC
25µs
100µs
1ms
10ms
100ms
36
1,000
50